| 压力下半导体GaAs的电子表面态 |
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| 引用本文： | 闫祖威,班士良,梁希侠. 压力下半导体GaAs的电子表面态[J]. 内蒙古大学学报(自然科学版), 2001, 32(6): 621-624 |
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| 作者姓名： | 闫祖威 班士良 梁希侠 |
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| 作者单位： | 内蒙古大学理工学院物理系 |
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| 基金项目： | 内蒙古自然科学基金资助项目，“3 2 1”人才工程，国家回国人员科研资助项目 |
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| 摘 要： | 使用插值拟合近似获得晶格常数、带隙随压力的解析表示，采用变分法研究了流体静力学压力对半导体GaAs电子本征表面态的影响，数值结果表明，随压力增加电子表面态能级明显向上移动，且电子趋近表面。
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| 关 键 词： | 电力表面态 半导体 砷化镓 流体静力学压力 变分法 表面态能级 态密度 |
| 文章编号： | 1000-1638(2001)06-0621-04 |
| 修稿时间： | 2001-05-08 |
Surface States of Electrons in Semiconductor GaAs under Pressure |
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| YAN Zu wei ,,BAN Shi liang ,LIANG Xi xia. Surface States of Electrons in Semiconductor GaAs under Pressure[J]. Acta Scientiarum Naturalium Universitatis Neimongol, 2001, 32(6): 621-624 |
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| Authors: | YAN Zu wei BAN Shi liang LIANG Xi xia |
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| Affiliation: | YAN Zu wei 1,2,BAN Shi liang 1,LIANG Xi xia 1 |
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| Abstract: | With a viriational treatment, the surface states of electrons in semiconductor GaAs have been studied as a function of hydrostatic pressure taking into account an interpolation fit approximation between the lattice constant, band gap and the pressure effect.The numerical results show that the electrons tend to close the surface and their surface states are heightened obviously with increasing pressure. |
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| Keywords: | pressure surface states of electrons semiconductor |
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