| 1.3μm InGaAsp/Inp DCC结构对激光器阈值和T_0值的影响 |
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| 引用本文： | 王凤兰.1.3μm InGaAsp/Inp DCC结构对激光器阈值和T_0值的影响[J].高师理科学刊,2003,23(2):24-25. |
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| 作者姓名： | 王凤兰 |
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| 作者单位： | 哈尔滨师范大学,呼兰学院,黑龙江,呼兰,150500 |
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| 摘 要： | 研究了 1 .3 μmInGaAsp InpDCC结构中间夹层厚度对激光器阈值和T0 值的影响 ,并得到了最佳的夹层厚度
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| 关 键 词： | InGaAsp/Inp异质结 温度特性 阈值电流 |
| 文章编号： | 1007-9831(2003)02-0024-02 |
| 修稿时间： | 2003年2月20日 |
The effect of thin mezzanine thickness on laser threshold value and T0 in 1.3μm InGaAsp/InP DCC structure |
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| WANG Feng-lan.The effect of thin mezzanine thickness on laser threshold value and T0 in 1.3μm InGaAsp/InP DCC structure[J].Journal of Science of Teachers＇College and University,2003,23(2):24-25. |
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| Authors: | WANG Feng-lan |
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| Abstract: | It investigated the effect of thin mezzanine thickness on laser threshold value and T 0 in 1.3μm InGaAsp/InP DCC structure and obtained the optimum mezzanine thickness. |
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| Keywords: | InGaAsp/Inp heterojunction the characteristic of temperature the threshold of current density |
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