| 存在集中分布界面态的异质结的C—V特性研究 |
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| 引用本文： | 张胜坤,陈溪滢.存在集中分布界面态的异质结的C—V特性研究[J].复旦学报(自然科学版),1997,36(3):323-329. |
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| 作者姓名： | 张胜坤 陈溪滢 |
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| 作者单位： | 复旦大学物理学系!上海，200433 |
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| 基金项目： | 国家科委基础研究重大项目 |
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| 摘 要： | 提出用高频Ｃ－Ｖ法测量半导体异质结中集中分布的界面态的能位位置的方法，并分析了测试温度以及由异质结的能带偏移所引起的载流子积累对测试结果的影响，有这一方法对ＧａＳ／ＧａＡｓ和ＺｎＳｅ／ＧａＡｓ两种异质结进行了测试，发现在这两种异质界面上均存在集中分布的界面态，其能级位置分别为Ｅｃ－０．４１ｅＶ，Ｅｃ－０．５１ｅＶ。
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| 关 键 词： | 异质结 离频C－V法 集中分布 界面态密度 |
Capacitance-Voltage characterization of heterojunctions with the distribution of concentrated interface states |
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| Zhang Shengkun, Lu Fang, Chen Xiying, Sun Henghui.Capacitance-Voltage characterization of heterojunctions with the distribution of concentrated interface states[J].Journal of Fudan University(Natural Science),1997,36(3):323-329. |
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| Authors: | Zhang Shengkun Lu Fang Chen Xiying Sun Henghui |
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| Institution: | Physics Department |
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| Abstract: | In this paper, the capactitance induced by the interface defects at the heterojunction is theoretically analyzed and the high frequency C-V measurement is presented to obtainthe activation energies of concentrated interface defects. The effect of temperature is discussed. The influence on the experimental results which is caused by the carrier accumulation at the interfaCe due to band discontinuity is also considered. The interface defectsat GaS/GaAS and ZnSe/GaAs heterojunctions have been measured by this method. |
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| Keywords: | heterojunction high frequency C-V measurement concentrated distribution interface trap level densities |
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