| 无结晶体管的研究现状及展望 |
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| 引用本文： | 周艳文,樊子铭,宁洁.无结晶体管的研究现状及展望[J].辽宁科技大学学报,2013,36(5):484-488. |
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| 作者姓名： | 周艳文 樊子铭 宁洁 |
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| 作者单位： | 辽宁科技大学材料科学与工程学院,辽宁鞍山,114051;辽宁科技大学材料科学与工程学院,辽宁鞍山,114051;辽宁科技大学材料科学与工程学院,辽宁鞍山,114051 |
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| 基金项目： | 国家自然科学基金（51372109,51172101）;辽宁省优秀人才项目（LR2012009）. |
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| 摘 要： | 晶体管是电子设备的关键器件,对电子设备的性能起到很大的作用.现有的晶体管主要是由引入掺杂原子到半导体材料中形成半导体结构成.而无结晶体管是源极、漏极、沟道共用一根纳米线,没有形成传统的源极结和漏极结,因此简化了制作工艺,降低了制作成本.本文主要论述了无结晶体管的发展历史、工作原理、主要性能和分类,并对无结晶体管的应用进行了展望.
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| 关 键 词： | 无结晶体管 开关比 亚阈值斜率 阈值电压 |
Review of junctionless transistor |
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| ZHOU Yanwen,FAN Ziming,NING Jie.Review of junctionless transistor[J].Journal of University of Science and Technology Liaoning,2013,36(5):484-488. |
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| Authors: | ZHOU Yanwen FAN Ziming NING Jie |
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| Institution: | (School of Materials Science and Engineering, University of Science and Technology Liaoning, Anshan 1 14051, China ) |
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| Abstract: | The transistors are key components of electronic devices, and play a key role in the performance. Most existing transistors are based on the use of semiconductor junctions, formed by introducing dopant at- oms into the semi-conductive material. The junctionless transistor （JLT） is composed by the source, drain and channel within a nanowire, without source-drain junction at all. Therefore, JLTs are able to simplify the pro- duction processes, and reduce the costs. The developing history and the principles of JLT are described in this paper. The main properties and recent progresses trends of JLT are forecasted. on JLT are introduced in detail. Finally, the development |
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| Keywords: | junctionless transistor on/off current ratio sub-threshold swing threshold voltage |
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