| 垒层p型掺杂量的分布对InGnN基发光二极管性能的影响 |
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| 引用本文： | 刘超, 李述体, 仵乐娟, 王海龙. 垒层p型掺杂量的分布对InGnN基发光二极管性能的影响[J]. 华南师范大学学报（自然科学版）, 2013, 45(2). |
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| 作者姓名： | 刘超 李述体 仵乐娟 王海龙 |
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| 作者单位： | 1.1.华南师范大学光电子材料与技术研究所 |
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| 基金项目： | 国家自然科学基金资助项目;广州市科技攻关项目 |
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| 摘 要： | 采用APSYS软件分析了InGaN基发光二极管的垒层中p型掺杂量的分布及作用.研究结果表明当所有的p型掺杂量集中于最后一个垒层时，发光二极管的发光强度最大，大注入电流下的效率衰减量最小.其主要原因为优化垒层中p型掺杂量的分布有利于电子限制和空穴注入.
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| 关 键 词： | 多量子阱 |
| 收稿时间： | 2012-03-19 |
| 修稿时间： | 2012-04-23 |
Influence of p-GaN Barrier Distribution in the Active Region on the Performance of InGaN Based Light-emitting Diodes |
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| Influence of p-GaN Barrier Distribution in the Active Region on the Performance of InGaN Based Light-emitting Diodes[J]. Journal of South China Normal University (Natural Science Edition), 2013, 45(2). |
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| Abstract: | The blue InGaN based light-emitting diodes (LEDs) with constant total p-doping amount in barriers but different doping distribution has been numerically studied by the APSYS simulation software in this paper. The simulation results demonstrated that with more p-doping amount centralized in the last barrier, higher output power was illustrated. In the meanwhile, the efficiency droop was markedly improved at injection current of 200mA. It is mainly attributed to more efficient electron blocking and hole injection as well as lower electron leakage current. |
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| Keywords: | Multiple quantum wells |
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