Analyses of plasma reactive sputter deposition of CNx films by OES |
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Authors: | Jing Zhao Ning Kang Jinguo Wang Rongyao Wang Jiren Xu |
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Institution: | (1) Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing, China |
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Abstract: | Conclusion Adding Ar to the sputtering gas N2 had influence upon the species distribution in the gas phase. Our experimental results suggest that the N-to-C ratio is not
sensitive to the local binding states of elements in the CNx films. In order to increase the percentage of one of desired bonding structures in the film it is relatively limited by means
of optimizing the discharge parameters such as the voltage of graphite target and flow ratio of sputtering gases. Other methods
such as physical and/or chemical treatments of deposition surface may be effective. As reported work shows, increasing temperature
of substrate is useful to decomposition of parayanogen structure2] or impact of ions on deposition surface to formsp
3 bond structurer1]. It is believed that finding new methods of deposition surface treatments is worth further considering if we hope to deposit
and increase one of desired percentage ofbond structure in the films. |
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Keywords: | carbon nitride film optical emission spectras optical gap |
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