| 化学法清洗硅片过程中清除颗粒的机理(英文) |
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| 引用本文： | 李永成,孙宇. 化学法清洗硅片过程中清除颗粒的机理(英文)[J]. 大连理工大学学报, 1998, 0(Z1) |
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| 作者姓名： | 李永成 孙宇 |
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| 作者单位： | 纳诺帕蒂公司，天津理工学院化工系 |
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| 摘 要： | 对化学法清洗硅片过程中消除颗粒的机理作了定量的探讨。颗粒的清除是由于化学蚀刻和颗粒与表面排斥力共同作用的结果。首次提出了最浅蚀刻深度和最小蚀刻速度的概念。最浅蚀刻深度可通过颗粒与表面间作用能的关系进行计算。是小蚀刻速度则可通过蚀刻侧形进行计算。研究结果对于优化化学法清洗过程和设计高性能清洗液都具有重要意义。
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| 关 键 词： | 颗粒清除，硅片清洗，颗粒与表面间的作用，最浅蚀刻深度，最小蚀刻速度 |
Mechanisms of particle removal from silicon wafer surface in wet chemical cleaning process |
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| Yongcheng Li Nanoptics,Inc.,Gainesville,FL ,USA YU Sun. Mechanisms of particle removal from silicon wafer surface in wet chemical cleaning process[J]. Journal of Dalian University of Technology, 1998, 0(Z1) |
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| Authors: | Yongcheng Li Nanoptics Inc. Gainesville FL USA YU Sun |
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| Affiliation: | Yongcheng Li Nanoptics,Inc.,Gainesville,FL 32609,USA YU Sun Department of Chemical Engineering,Tianjin Institute of Technology,Tianjin,China |
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| Abstract: | A quantitative mechanism of particle removal from silicon wafer surfaces by wet chemical cleaning process was proposed. The particles are removed from the surface due to the combined effects of chemical etch and a net repulsive interaction between the particle and surface. The mechanism suggests a minimum etch depth, which has been determined theoretically, and a minimum etch rate, which can be determined from etch profile calculation, are required for particle removal. The study will help in the optimization of the cleaning processes and formulation of superior cleaning solutions. |
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| Keywords: | particle removal silicon wafer cleaning particle surface interaction: minimum etch depth minimum etch rate |
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