| 77K硅双极晶体管HFE参数的原理与设计 |
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| 引用本文： | 郑茳,陈卫东.77K硅双极晶体管HFE参数的原理与设计[J].东南大学学报(自然科学版),1991,21(1):65-70. |
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| 作者姓名： | 郑茳 陈卫东 |
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| 作者单位： | 东南大学微电子中心，东南大学微电子中心，东南大学微电子中心，东南大学微电子中心 |
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| 摘 要： |
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| 关 键 词： | 硅 双极晶体管 晶体管 电流增益 |
Principle and Design of H_FE Parameter of Silicon Bipolar Transistors at 77K |
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| Zheng Jiang Chen Weidong Wei Tongli Meng Jiangsheng.Principle and Design of H_FE Parameter of Silicon Bipolar Transistors at 77K[J].Journal of Southeast University(Natural Science Edition),1991,21(1):65-70. |
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| Authors: | Zheng Jiang Chen Weidong Wei Tongli Meng Jiangsheng |
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| Institution: | Microelectronics Center |
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| Abstract: | In this paper, the mechanism of the decrease of current gain with decreasing temperature in silicon bipolar transistors is analysed, and a new relationship between H_(FE) and the doping concentration of the emitter N_E at low temperature is presented. The principle of the design of H_(FE) parameter of silicon bipolar transistor operating at 77K is clarified. The theoretical analyses are well in accord with the experimental results. On the basis, a novel transistor with the amorphous-silicon emitter for liquid-nitrogen temperature operation is fabricated. |
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| Keywords: | silicon bipolar transistors / 77K current gain |
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