| 外加压力时双纳米线中浅施主杂质的性质 |
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| 引用本文： | 朱立坤,白占国,咸立芬,白志明. 外加压力时双纳米线中浅施主杂质的性质[J]. 河北科技大学学报, 2009, 30(1): 13-16,24 |
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| 作者姓名： | 朱立坤 白占国 咸立芬 白志明 |
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| 作者单位： | 河北科技大学招生就业处,河北,石家庄,050018;河北科技大学理学院,河北,石家庄,050018;河北科技大学研究生学院,河北,石家庄,050018;河北科技大学理学院,河北,石家庄,050018 |
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| 基金项目： | 河北省自然科学基金，河北科技大学科研基金 |
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| 摘 要： | 在有效质量近似下，采用简单的尝试波函数变分地计算了压力对浅施主杂质在对称GaAs／Ga1-xAlxAs双纳米线中的束缚能的影响：计算了线宽、施主离子位置及垒宽对体系束缚能的影响，发现随压力增加和垒宽的减小双线间的耦合越来越强；体系束缚能随线宽显示出非线性行为，并且在线宽较小时体系束缚能有一最大值，所得结果和前人计算符合很好。
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| 关 键 词： | 纳米线 浅施主杂质 束缚能 |
| 收稿时间： | 2008-09-22 |
| 修稿时间： | 2008-11-12 |
Studies on property of shallow donor impurity in symmetrical double nanometer-wires under compressive stress |
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| ZHU Li-kun,BAI Zhan-guo,XIAN Li-fen and BAI Zhi-ming. Studies on property of shallow donor impurity in symmetrical double nanometer-wires under compressive stress[J]. Journal of Hebei University of Science and Technology, 2009, 30(1): 13-16,24 |
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| Authors: | ZHU Li-kun BAI Zhan-guo XIAN Li-fen BAI Zhi-ming |
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| Affiliation: | 1.Enrolment and Vocation Guidance Office;Hebei University of Science and Technology;Shijiazhuang Hebei 050018;China;2.College of Sciences;3.School of Graduate;China |
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| Abstract: | The binding energies of shallow donor impurity in symmetrical GaAs/Ga1-xAlxAs double nanometer-wires are calculated variationally by using a simple wave function within the effective-mass approximation.The variation of the binding energies as functions of the wire width,donor ion positions,and barrier width is studied.It is found that the couple between double wires enhances with increasing stress and decreasing barrier width.The binding energies ehxibit nonlinear behavior with wire width and have a maximum... |
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| Keywords: | nanometer-wires shallow donor impurity binding energies |
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