金属In与掺Nb的SrTiO3金属半导体接触研究

研究了金属In与掺不同Nb浓度的SrTiO₃（Nb-STO）衬底之间构成的金属半导体结（金-半结）。测量了不同温度下的I-V曲线。在掺杂浓度为0.05 wt.%衬底构成的金-半结I-V曲线中，反向电压部分得到的有效因子n在1.05～1.10之间，且随温度变化很小，而正向的n很大，表明出势垒随着偏压的变化改变很大。金属In与Nb-STO衬底之间构成的金-半结在浓度为0.05 wt.%和0.7 wt.%的掺杂情况下，结点都表现出非线性的I-V关系，均不能视为欧姆接触。

The Metal-Semiconductor Junction of Indium and Nb Doped SrTiO3

The metal-semiconductor junction of indium and Nb doped SrTiO3 were fabricated. The current-voltage of the junction were obtained by three terminals method, In the junction of 0.05 wt, % doped Nb-STO, the effect factor n derived from negative voltage are in range 1.05-1.10 and almost independent of temperature. The junctions both show non-linear I-V characteristic. The contact between Indium and Nb-STO could not be treated as Ohmic contact, even in high doped Nb-STO.