N/P硅外延片的少子扩散长度测量

本文提出了用N/P硅外延片的结光电压光谱响应确定N/P硅外延片中少子扩散长度的方法.导出了入射光强1和结光电压V、光吸收系数a的理论关系,其中包含了外延层和衬底少子扩散长度的信息.

THE MEASUREMENT OF MINORITY CARRIER DIFFUSION LENGTH IN N LAYER OF N/P EPITAXIAL SILICON WAFER

Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer. The authors made a group of diagrams which contained the information of minority carrier diffusion lengths in the epitaxial layer and the substrate according to the theoretical analysis. When there is a thermal SiO₂ thin film on the surface of the sample, the photovoltage of the sample depends on the characteristics of the epitaxial P-N junction.