Preparation of CuInSe2 thin films by four-step process

A simple process for the deposition of CuInSe₂ thin films was described. The CuInSe₂ compound was prepared by selenization of Cu-In alloy precursors, which were electrodeposited at a constant current. The selenized precursors were compacted and then annealed. The films were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The results indicate that single-phase CuInSe₂ is formed at 250°C and its crystallinity of this phase is improved as the annealing temperature rises. The losses of In occur in selenization process. The dense CuInSe₂ film with comparatively smooth surface can be obtained by compaction under the pressure of 200 MPa.