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Ge_xSi_(1-x)/Si应变超晶格的质量鉴别
引用本文:李梅,葛中久,张志舜.Ge_xSi_(1-x)/Si应变超晶格的质量鉴别[J].吉林大学学报(理学版),1996(2).
作者姓名:李梅  葛中久  张志舜
作者单位:中国科学院长春物理研究所
摘    要:采用分子束外延(MBE)方法生长了GexSi1-x/Si应变超晶格.利用X射线双晶衍射、小角衍射和宽角衍射方法测量了超晶格样品的实验衍射曲线.运用X射线运动学理论和动力学理论,分析、模拟了样品的实验曲线,得到了精确的定量结构参数数据.并根据实验曲线中衍射峰的位置和分布情况对应变超晶格的生长质量做了评价.

关 键 词:X射线衍射,双晶回摆曲线,应变层超晶格

Quality Evaluation and Structural Characteristic on Ge_XSi_(1-x)/SI Strained-Layer Superlattice
Li MeI,Ge Zhongjiu,Zhang Zhishun.Quality Evaluation and Structural Characteristic on Ge_XSi_(1-x)/SI Strained-Layer Superlattice[J].Journal of Jilin University: Sci Ed,1996(2).
Authors:Li MeI  Ge Zhongjiu  Zhang Zhishun
Abstract:GexSi1-x/Si strained layer superlattice grown by means of MBE was measured using X-ray double crystal diffraction,small-angle diffraction and wide-angle diffraction methods.Structure parameters of GexSi1-x/Si superlattice were calculated. The calculated results were used for the computer simulation of GexSi1-x/Si strained layer superlattice double-crystal rocking curve.It has beenshown that dynamical diffraction theory of X-ray can give precise quantitative results.
Keywords:X-ray diffraction  double-crystal rocking curve  strained-layer superlattice
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