| 非晶FeCuNbSiB多层膜的巨磁阻抗效应(英) |
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| 引用本文： | Oumarou M,李晓东,袁望治,阮建中,赵振杰,杨燮龙.非晶FeCuNbSiB多层膜的巨磁阻抗效应(英)[J].华东师范大学学报(自然科学版),2005,2005(1):68-72,143. |
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| 作者姓名： | Oumarou M 李晓东 袁望治 阮建中 赵振杰 杨燮龙 |
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| 作者单位： | 华东师范大学物理系，华东师范大学物理系，华东师范大学物理系，华东师范大学物理系，华东师范大学物理系，华东师范大学物理系 上海 200062，上海 200062，上海 200062，上海 200062，上海 200062，上海 200062 |
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| 基金项目： | 上海市科委资助项目(0252nm004,0352nm060) |
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| 摘 要： | 研究在250℃退火温度下非晶FeCuNbSiB薄膜的巨磁阻抗效应.X-ray谱和Mössbauer谱显示样品为非晶状态.导电层的厚度为2μm，磁性层的厚度为1μm.三明治结构的最大阻抗效应为20%.为了提高巨磁阻抗效应，在两磁性层之间加入了绝缘层SiO2，在250℃退火温度下最大阻抗效应为62%.随着驱动电流频率的增大，磁阻抗效应曲线由随磁场的单调下降变为出现峰的结构.
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| 关 键 词： | 巨磁阻抗效应 多层膜 磁控溅射 FeCuNbSiB 绝缘层 巨磁阻抗效应 多层膜 磁控溅射 FeCuNbSiB 绝缘层 |
| 收稿时间： | 2003-9-4 |
| 修稿时间： | 2003-10-25 |
GMI Effect Study of Amorphous FeCuNbSiB Multilayered Films(English) |
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| Oumarou M,LI Xiao-dong,YUAN Wang-zhi,RUAN Jian-zhong,ZHAO Zhen-jie,YANG Xie-long.GMI Effect Study of Amorphous FeCuNbSiB Multilayered Films(English)[J].Journal of East China Normal University(Natural Science),2005,2005(1):68-72,143. |
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| Authors: | Oumarou M LI Xiao-dong YUAN Wang-zhi RUAN Jian-zhong ZHAO Zhen-jie YANG Xie-long |
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| Institution: | Department of Physics, East China Normal University, Shanghai200062, China |
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| Abstract: | Giant magneto-impedance (GMI) has been observed in amorphous FeCuNbSiB/Cu/FeCuNbSiB sandwiched films annealed at 250℃.The conductive layer is about 2μm while the outer magnetic layers are about 1μm thick each. The GMI ratio of 20% has been obtained. In the goal to improve this ratio, two insulator layers have been used between the different layers followed by an annealing process at 250℃.A GMI ratio of 62% has been obtained. The displacement of GMI peaks with increasing of driving current frequency appears also. The amorphous state of the films was confirmed by an X-ray diffraction and Mössbauer spectrum. |
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| Keywords: | GMI effect multilayered films magnetron sputtering FeCuNbSiB insulator layer |
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