| 离子注入和溅射率的蒙特卡罗模拟计算 |
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| 引用本文： | 陈长琦,朱武,方应翠,干蜀毅,陈贤祥.离子注入和溅射率的蒙特卡罗模拟计算[J].合肥工业大学学报(自然科学版),2001,24(6):1105-1110. |
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| 作者姓名： | 陈长琦 朱武 方应翠 干蜀毅 陈贤祥 |
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| 作者单位： | 合肥工业大学机械与汽车工程学院,安徽,合肥,230009 |
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| 摘 要： | 蒙特卡罗方法是一种模拟随机性问题的好方法 ,文章依据离子注入和溅射原理并运用蒙特卡罗方法在计算机上模拟了氩离子注入铜靶中的注入离子轨迹、碰撞级联和铜靶在氩离子不同能量和氩离子不同入射方向时的溅射率 ,并对所取得的模拟结果进行了分析研究 ,为提高溅射镀膜生产效率提供了理论依据。
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| 关 键 词： | 蒙特卡罗方法 离子注入 溅射 模拟 |
| 文章编号： | 1003-5060(2001)06-1105-06 |
| 修稿时间： | 2001年8月15日 |
Simulation of ion implantation and computation of sputtering yield with Monte Carlo method |
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| CHEN Chang qi,ZHU Wu,FANG Ying cui,GAN Shu yi,CHEN Xian xiang.Simulation of ion implantation and computation of sputtering yield with Monte Carlo method[J].Journal of Hefei University of Technology(Natural Science),2001,24(6):1105-1110. |
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| Authors: | CHEN Chang qi ZHU Wu FANG Ying cui GAN Shu yi CHEN Xian xiang |
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| Abstract: | In this paper,Monte Carlo method,which is a good method to simulate random problems,is used to simulate in the computer the track of argon ions implanted in the copper target, collision of argon ions with copper atoms, collision of copper atoms with each other and the sputtering yield of copper in the case of different argon ion energy and different incidence angle of argon ions according to the principle of ion implantation and sputtering. The analysis of simulation results is also included in the paper. The work herein provides a theoretical basis for increasing the productivity of the vacuum sputtering coating. |
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| Keywords: | Monte Carlo method ion implantation sputtering simulation |
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