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一种在弱酸溶液中采用金属辅助湿法化学刻蚀黑硅的新方法
引用本文:廖承菌,;李学铭,;杨培志. 一种在弱酸溶液中采用金属辅助湿法化学刻蚀黑硅的新方法[J]. 云南师范大学学报(自然科学版), 2014, 0(5): 18-20
作者姓名:廖承菌,  李学铭,  杨培志
作者单位:[1]可再生能源材料先进技术与制备教育部重点实验室,云南昆明650092; [2]云南师范大学太阳能研究所,云南昆明650092
基金项目:国家自然科学基金资助项目(61066004,U1037604)
摘    要:为降低黑硅材料的成本,将太阳电池级单晶硅片浸入含有氯金酸(HAuCl4)的草酸/氢氟酸(H2C2O4/HF)混合水溶液中做刻蚀.利用扫描电子显微镜(SEM)和紫外—可见—近红外分光光度计对表面形貌和反射光谱进行了表征与测量.结果表明:样品表面具有网格状陷光结构,在350~2 500nm波段平均反射率约为11.3%.

关 键 词:黑硅  弱酸溶液  广谱吸收

A New Method to Prepare Black Silicon by Using Metal-assisted Chemical Etching under Weak Acid Aqueous Solution
LIAO Chen-jun;YANG Pei-zhi. A New Method to Prepare Black Silicon by Using Metal-assisted Chemical Etching under Weak Acid Aqueous Solution[J]. Journal of Yunnan Normal University (Natural Sciences Edition), 2014, 0(5): 18-20
Authors:LIAO Chen-jun  YANG Pei-zhi
Affiliation:LIAO Chen-jun, YANG Pei-zhi, LI Xue-ming (1. Advanced Technology and Manufacturing Key Lab on Renewable Energy Materials of the Ministry of Education of China,Kunming 650092,China; 2. Solar Energy Research Institute,Yunnan Normal University,Kunming 650092,China)
Abstract:In order to further reduce the cost of preparation of black silicon,a novel method to prepare black silicon based on as-cut silicon has been performed under H2C2O4/HF mixed aqueous solution containing HAuCl4.The reflective spectrum of such black silicon surface and the microstructure were measured by UV-VIS-NIR spectrophotometer and scanning electron microscope(SEM),respectively.Results show that the sample has grid-like light-trapping structure,its average reflectance is roughly 11.3% in the range of 350-2 500 nm.
Keywords:Black silicon  Weak acid solution  Wide spectral absorbing
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