V—Ga共掺TiO2光伏电池模拟与研究

基于实验上获得的带隙宽度为1．6eV的V-Ga共掺杂TiO2材料，设计了一种新型pin结构光伏电池．通过Nb：TiO2作为n型重掺杂层，Cu20或CuO作为P型掺杂层，建立pn结自建电场．中间层V-Ga：TiO2为主要光吸收层，运用AMPS-1D软件模拟器件性能，研究Cu2O或CuO材料作为P型层对光伏性能的影响．模拟结果显示，Cu2O在这种结构中适合作为P型层，优化后器件光伏转化效率可达到34％．此外，通过对材料中带尾缺陷密度、吸收层与P型层界面对器件性能影响的研究，为器件制备中可能存在的问题提供解决思路．

V-Ga co-doped TiO2 photovoltaic cell simulation and research

A novel photovoltaic （PV） cell with the pin structure was designed based on the V,Ga co-doped TiO2 （V-Ga： TiO2） from which a bandgap of 1.6 eV had been experimentally obtained. With a heavily doped Nb：TiO2 layer being applied as the n-type layer and a Cu20 or CuO being used as the p-type layer, the built-in electric field between the pn junction was created. V-Ga：TiO2was located in the middle and acted as the main light-absorbing layer. The performance of this device was simulated by the AMPS-1D software. The simulation result showed that Cu20 was a suitable p-type layer in the structure, and that the optimized photovoltaic conversion efficiency could be as high as 34%. Furthermore, the influence of the band tail density and the interracial structure between the absorbing layer and the p-type layer on the performance of the PV device had been investigated, which could provide the solutions for the problems encountered in the device fabrication progress.