| GTR饱和区特性及其安全保护 |
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| 引用本文： | 郑学仁.GTR饱和区特性及其安全保护[J].华南理工大学学报(自然科学版),1998,26(8):54-57. |
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| 作者姓名： | 郑学仁 |
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| 作者单位： | 华南理工大学应用物理系 |
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| 摘 要： | 分析了大功率晶体管（ＧＴＲ）饱和区伏安特性，测量了不同驱动条件和工作温度下ＧＴＲ的集电极压降和集电极电流的关系．结果表明，存在一个饱和压降阈值，超过这个阈值后，过流将产生．据此设计了一种快速有效的过流保护电路．
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| 关 键 词： | 大功率晶体管 饱和压降 过流保护 |
CHARACTERISTICS OF THE SATURATION REGION AND THE OVER CURRENT PROTECTION OF GTR |
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| Zheng Xueren,He Xiaolong,Liu Baiyong,Wu Zhaohui.CHARACTERISTICS OF THE SATURATION REGION AND THE OVER CURRENT PROTECTION OF GTR[J].Journal of South China University of Technology(Natural Science Edition),1998,26(8):54-57. |
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| Authors: | Zheng Xueren He Xiaolong Liu Baiyong Wu Zhaohui |
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| Abstract: | In this paper the dependence of the saturation voltage of the giant transistor (GTR) on the collector current is analyzed and tested. The measurement of power modules SQD50AB100 shows that there exists a threshold of V CES ,over which V CES begins to increase rapidly as the collector current further increases. Based on experimental results, an over_current protection circuit was successfully designed and used in a power revertor device. |
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| Keywords: | power transistor saturation voltage over_current protection |
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