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雾化施液CMP工艺及实验设备
引用本文:朱欠,李庆忠,王陈,刘晓鹏,钱善华.雾化施液CMP工艺及实验设备[J].江南学院学报,2013(6):698-702.
作者姓名:朱欠  李庆忠  王陈  刘晓鹏  钱善华
作者单位:江南大学机械工程学院,江苏无锡214122
基金项目:国家自然科学基金项目(51175228).
摘    要:针对传统化学机械抛光的平坦化制程中抛光液使用量大和环保等问题,提出了一种利用超声波雾化抛光液进行抛光的工艺方法。介绍了试验台架搭建、工艺处理方法、工作原理和抛光工艺,并与传统化学机械抛光效果进行了比较。研究表明,在表面质量上,雾化工艺能够达到传统化学机械抛光的量级,其使用量是传统化学机械抛光的1/10。

关 键 词:化学机械抛光  雾化施液  去除率  表面粗糙度

Study on the Process and Experimental Equipment of Atomizing Slurry Applied Chemical Mechanical Polishing
ZHU Bing,LI Qing-zhong,WANG Chen,LIU Xiao-peng,QIAN Shan-hua.Study on the Process and Experimental Equipment of Atomizing Slurry Applied Chemical Mechanical Polishing[J].Journal of Jiangnan College,2013(6):698-702.
Authors:ZHU Bing  LI Qing-zhong  WANG Chen  LIU Xiao-peng  QIAN Shan-hua
Institution:( School of Mechanical Engineering, Jiangnan University, Wuxi 214122, China)
Abstract:For the slurry usage and environmental problems of the traditional chemical mechanical polishing(CMP) planarization polishing,we put forward a processing method of polishing slurry by ultrasonic atomization. It introduces the test platform built method, principle and polishing process, and compares with the traditional chemical mechanical polishing effect. This indicates that on the surface quality,the atomization process can achieve the level of the traditional chemical mechanical polishing with the traditional CMP 1/lO.
Keywords:chemical mechanical polishing  atomizing slurry applied  removal rate  surface roughness
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