| 椭偏术测定吸收薄膜的n、k、d值-多入射角法 |
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| 引用本文： | 魏志渊,严樟根,周邦伟,殷志强.椭偏术测定吸收薄膜的n、k、d值-多入射角法[J].清华大学学报(自然科学版),1986(6). |
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| 作者姓名： | 魏志渊 严樟根 周邦伟 殷志强 |
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| 作者单位： | 无线电电子学系
(魏志渊，严樟根，周邦伟)，无线电电子学系(殷志强) |
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| 摘 要： | 本文提出了一种多入射角椭偏术无损测定吸收薄膜ｎ、 ｋ、 ｄ的方法（ＱＷＤ－８４法）。叙述了它的基本原理和数据处理方法，探讨了测定技术中的几个要点，给出了测定流程图，并对玻璃和硅衬底的一些吸收薄膜进行了测定和比较。测定结果表明：该法是一种一次性无损实测吸收薄膜ｎ、ｋ、ｄ值的有效方法，它系统可靠、方便易行，对薄膜参数的测定和成膜工艺的研究有较重要的价值。
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| 关 键 词： | 椭偏术 多入射角 薄膜参数 衬底 |
The Determination of n, k, d, Values of Absorbing Thin Films using Multi-incident Angle Ellipsometry Technique |
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| Wei Zhiyuan,Yan Zhanggen,Zhou Bangwei,Yin Zhiqiang.The Determination of n, k, d, Values of Absorbing Thin Films using Multi-incident Angle Ellipsometry Technique[J].Journal of Tsinghua University(Science and Technology),1986(6). |
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| Authors: | Wei Zhiyuan Yan Zhanggen Zhou Bangwei Yin Zhiqiang |
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| Institution: | Department of Radio Electronics |
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| Abstract: | The paper presents an non-destructive n, k, d, value determination of absorbing thin films, i. e. QWD-84 method using multi-incident angle ellipsometry technique. A few important aspects were investigated in the course of the determination. Some of absorbing thin films on the substrates of glass and monocrystalline silicon were measured. Good agreement is obtained between QWD-84 method and method of spectrophotometer as well as step height measurements. The results indicate that QWD-84 is feasible, effective, undamaged and reliable to determine n, k, d values of absorbing thin films. |
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| Keywords: | ellipsometry multi-incident angle parameters of thin film substrate |
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