| N2O氮化LPCVD氧化物可靠性的改进 |
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| 引用本文： | 徐静平,钟德刚,于军.N2O氮化LPCVD氧化物可靠性的改进[J].华中科技大学学报(自然科学版),2001,29(Z1). |
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| 作者姓名： | 徐静平 钟德刚 于军 |
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| 作者单位： | 华中科技大学电子科学与技术系 |
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| 摘 要： | 通过与热生长氧化物进行比较 ,对LPCVD氧化物及N2 O氮化LPCVD氧化物的质量和可靠性进行了高场应力实验研究 .发现LPCVD氧化物有比热氧化物低的界面态密度Ditm 及小的应力感应Ditm 的增加 ,但电子陷阱产生和俘获率却表现出增强的性能 ,从而使击穿特性退化 .在N2 O氮化后 ,LPCVD氧化物的Si/SiO2界面和体质量得到很大提高 ,其机理在于N2 O氮化导致界面氮的结合及LPCVD氧化物中H2 副产物的有效排除 .
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| 关 键 词： | MOS电容 低压化学汽相淀积 氧化物 N2O氮化 |
Improvement of Reliability for N2O-Nitrided LPCVD Oxide |
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| Xu Jingping Zhong Degan Yu Jun Dept. of Electronic Sci. & Tech.,HUST,Wuhan ,China..Improvement of Reliability for N2O-Nitrided LPCVD Oxide[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,2001,29(Z1). |
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| Authors: | Xu Jingping Zhong Degan Yu Jun Dept of Electronic Sci & Tech HUST Wuhan China |
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| Institution: | Xu Jingping Zhong Degan Yu Jun Dept. of Electronic Sci. & Tech.,HUST,Wuhan 430074,China. |
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| Abstract: | Compared with thermal oxide, quality and reliability of low pressure chemical vapor deposited (LPCVD) oxide and N 2O nitrided LPCVD (LN2ON) oxide are experimentally investigated under high field stress conditions. It is found that LPCVD oxide posesses lower midgap interface state density D itm and smaller stress induced D itm increase than thermal oxide, but exhibits enhanced electron trapping rate and degraded charge to breakdown characteristics. After N 2O nitridation, the Si/SiO 2 interface and bulk oxide qualities of LPCVD oxide are significantly improved. The involved mechanisms lie interfacial nitrogen incorporation and effective elimination of hydrogen related species by N 2O nitridation. |
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| Keywords: | MOS capacitor LPCVD oxide N 2O nitridation |
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