| 软X射线分光晶体TAP缺陷成因的研究 |
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| 引用本文： | 陈义平,林树坤,关铁堂.软X射线分光晶体TAP缺陷成因的研究[J].福州大学学报(自然科学版),1997(1):98-101. |
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| 作者姓名： | 陈义平 林树坤 关铁堂 |
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| 作者单位： | 福州大学化学系 |
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| 摘 要： | 测定了ＴＡＰ晶体中铊离子的价态，发现ＴＡＰ晶体中除了一价的铊离子Ｔｌ＋外，还有少量三价铊离子Ｔｌ３＋的存在．实验还测定ＴＡＰ晶体中存在的金属离子杂质，总量为０２０７ｍｇ／ｇ．联系ＴＡＰ结构的特点讨论了ＴＡＰ晶体存在Ｔｌ３＋和金属离子杂质是产生ＴＡＰ晶体结构缺陷的重要原因，并分析了ＴＡＰ晶体位错线基本走向平行于ｃ轴的原因
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| 关 键 词： | 邻苯二甲酸氢铊 X射线分光晶体 晶体缺陷 |
Research on the Reason for the Formation of Defects in Soft X-ray Spectroscopy Crystal TAP |
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| Chen Yiping,Lin Shukun,Guan Tietang.Research on the Reason for the Formation of Defects in Soft X-ray Spectroscopy Crystal TAP[J].Journal of Fuzhou University(Natural Science Edition),1997(1):98-101. |
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| Authors: | Chen Yiping Lin Shukun Guan Tietang |
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| Institution: | Chen Yiping Lin Shukun Guan Tietang (Department of Chemistry, Fuzhou University, Fuzhou, 350002) |
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| Abstract: | The valence states of thallium ions in TAP crystal have been determined. It is shown that besides Tl +, there is a small number of Tl 3+ ions in TAP. The metal-ions impurities, the total of which is about 0 207mg/g, have been measured. In this paper, taking into account the features of the structure in TAP, we find that the exiting Tl 3+ ions and metal-ions impurities are the important reason for structure defects in TAP. The reason that the dislocation line runs parallel to c axis is analyzed as well. |
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| Keywords: | thallium hydrogen phthalate X-ray spectroscopy crystal crystal defect |
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