| 氩离子等离子体源离子注入的数值模拟 |
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| 引用本文： | 吴丹.氩离子等离子体源离子注入的数值模拟[J].湖南文理学院学报(自然科学版),2008,20(1):35-38. |
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| 作者姓名： | 吴丹 |
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| 作者单位： | 湖南文理学院物理与电子科学学院,湖南,常德,415000 |
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| 摘 要： | 应用PIC-MCC方法模拟了氩离子等离子体源离子注入过程,考虑了离子与中性粒子的电荷交换碰撞和弹性散射,模拟了不同电压、不同气压及不同等离子体密度下氩离子到达靶表面的能量分布和入射角分布,讨论了碰撞对能量分布和入射角分布的影响.
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| 关 键 词： | 等离子体源离子注入 PIC-MCC 入射角分布 能量分布 |
| 文章编号： | 1672-6146(2008)01-0035-04 |
| 修稿时间： | 2007年12月10 |
Simulation of argon ion plasma source ion extraction |
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| WU Dan.Simulation of argon ion plasma source ion extraction[J].Journal of Hunan University of Arts and Science:Natural Science Edition,2008,20(1):35-38. |
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| Authors: | WU Dan |
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| Institution: | WU Dan (Department of physics , electronic science,Hunan university of arts , science,Changde,Hunan,415000) |
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| Abstract: | Plasma source ion implantation was a new technology of plasma material surface modification in low temperature environment.PIC-MCC method was used to simulate the process of argon ion plasma source ion extraction. The charge exchange collision and the elastic scattering between the ion and the neutral particle were considered.The results of incident angle distribution and energy distribution when the argon ions arrived the target surface under different voltage and different pressure were gotten.And the inf... |
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| Keywords: | Plasma source ion implantation PIC-MCC Incident angle distribution Energy distribute |
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