| 外延Pb(Zr0.2Ti0.8)O3薄膜中畴生长与所加脉冲的关系 |
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| 引用本文： | 侯光团,李立本,陈庆东. 外延Pb(Zr0.2Ti0.8)O3薄膜中畴生长与所加脉冲的关系[J]. 河南科技大学学报(自然科学版), 2012, 0(1): 88-91,9,10 |
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| 作者姓名： | 侯光团 李立本 陈庆东 |
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| 作者单位： | 河南科技大学物理与工程学院 |
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| 基金项目： | 国家自然科学基金项目(50972056) |
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| 摘 要： | 采用柱状畴的理论模型,研究了用原子力显微镜的探针在外延Pb(Zr0.2Ti0.8)O3薄膜中形成的纳米畴的生长与所加脉冲的关系。指出在PZT薄膜中畴的半径随所加脉冲的持续时间的增加以对数方式增大,随脉冲电压的增加而线性增大。理论计算与试验结果相吻合。
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| 关 键 词： | Pb(Zr0.2Ti0.8)O3 薄膜 畴 |
Relationship Between Growth of Domain in Epitaxial Pb(Zr0.2Ti0.8)O3 Thin Films and Plus |
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| HOU Guang-Tuan,LI Li-Ben,CHEN Qing-Dong. Relationship Between Growth of Domain in Epitaxial Pb(Zr0.2Ti0.8)O3 Thin Films and Plus[J]. Journal of Henan University of Science & Technology:Natural Science, 2012, 0(1): 88-91,9,10 |
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| Authors: | HOU Guang-Tuan LI Li-Ben CHEN Qing-Dong |
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| Affiliation: | (Physics & Engineering School,Henan University of Science & Technology,Luoyang 471003,China) |
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| Abstract: | The relationship between the growth of the nanosized domains tailored by the tip of atomic force microscope in epitaxial Pb(Zr0.2Ti0.8) O3 thin films and the voltage plus was studied by the circular cylinder model.The results suggest that the domain radius increases logarithmically with increasing writing time,and varies linearly with the applied voltage in the PZT thin films.The theoretically explanation agrees with the experiment. |
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| Keywords: | Pb(Zr0.2Ti0.8)O3 Thin film Domain |
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