掺杂Ir盐的立方体AgCl微晶中光电子的衰减特性

电子陷阱掺杂剂通过改变卤化银微晶的内部结构来影响光电子寿命和填隙银离子行为，从而能有效地改善卤化银感光性能。本文主要介绍采用微波吸收介电谱检测技术，检测在立方体AgCl微晶中30％Ag位置处掺杂(NH4)4IrCl6的光电子衰减时间分辨特性，结果表明：IrCl6]^4。原子团引入的掺杂中心起较深电子陷阱的作用。通过对室温条件下光电子衰减随掺杂浓度变化关系的分析得出：掺杂(NH4)4IrCl6浓度越小，光电子衰减时间越长，对潜影形成所起的作用越大，掺杂效果越好。

Photoelectron Decay Characteristic of Cubic AgCl Microcrystals Doped with Ir Salts

Dopants acting as electron traps can be substitutionally incorporated into AgX crystals and change the AgX lattice,which can influence the photoelectron lifetime and the behavior of the interstitial silver ions.Thus it can improve the photographic sensitivity effectively.The photoelectron decay time-resolved spectra were measured by microwave absorption and dielectric-spectrum technique.The dopant (NH_4)_4IrCl_6 was introduced in 30%Ag of cubic AgCl microcrystals and its concentration was varied.The experimental results show ~(4-) dopant center can act as deeper electron trap.By analyzing the photoelectron decay behavior with doping concentration at room temperature,it is obtained that when the doping concentration decreasing,the photoelectron decay time is longer,the effect to latent image formation is more great,the doping effect is better.