惰性盐辅助法合成氮化镓纳米棒及其场发射性能研究(英文)

以惰性盐为分散剂,通过直接氮化金属镓与氟化钙的混合物,在较低温度下(650℃)大量合成出角面截面型氮化镓纳米棒,大大低于以往文献报道的氮化温度(900℃以上)。通过X射线衍射和电子显微镜等设备表征,可知所制得的产物为六方相氮化镓纳米棒,且纳米线沿着c轴择优生长;每根氮化镓纳米棒都具有菱形或三角形截面。由于本方法的制备温度低,导致了氮化镓纳米棒与硅基片的良好接触。场发射实验表明,该复合系统具有很低的开启电压(5.4V/μm)和阈场(8.4V/μm)。

Application of Inert Salt-Assisted Route to Faceted GaN Nanorods and Their Field Emission Property

Inert salt-assisted route has been developed to prepare gallium nitride nanorods on Au-coated Si substrate through directly nitriding Ga-CaF2 mixture with NH3/N2 at 650 ℃,about 250 ℃ lower than previous literature reports.X-ray diffraction indicates the as-prepared products consist of hexagonal GaN nanorods and grow preferentially along c-axis.Scanning electron microscopy shows the as-prepared GaN nanorods having rhombic and triangular cross-sections.Quite good field emission property is obtained due to the natural integration of the GaN nanorods and the commonly-used Si substrate in this mild preparation,which suggests the potential applications.