| 电子束纳米分辨率光刻 |
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| 引用本文： | 顾宁,鲁武,陆祖宏.电子束纳米分辨率光刻[J].东南大学学报(自然科学版),1994(2). |
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| 作者姓名： | 顾宁 鲁武 陆祖宏 |
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| 作者单位： | 东南大学生物科学与医学工程系 |
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| 摘 要： | 本文侧重分析电子束纳米光刻中的若干限制因素，包括电子光学系统中的象差、电子束与抗蚀剂的相互作用（散射与二次电子效应）、衬底条件等，并对已用于进行纳米分辨率电子束光刻中的一些方法进行了归纳，讨论了其应用前景．
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| 关 键 词： | 电子束光刻，二次电子／纳米结构，纳米光刻，背散射电子 |
Electron-Beam Nanolithography |
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| GuNing,Luwu,Luzuhong.Electron-Beam Nanolithography[J].Journal of Southeast University(Natural Science Edition),1994(2). |
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| Authors: | GuNing Luwu Luzuhong |
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| Abstract: | The limits of EBL are the limits of lithography,mainly involving electron-optical system,interaction between electron beams and resist layers(backscattered electron and secondary electroneffect),substrate conditions and so on. On the basis of analysing these limitative factors,severalmethods for using electron beams to produce structuers with dimensions below 100 nm,specially sub-10-nm, are reviewed in this paper. |
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| Keywords: | electron-beam lithography(EBL) secondary electron/ nanometer structures nanolithography backscattering electron |
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