| 宽带隙半导体器件仿真中收敛性问题的分析 |
| |
| 引用本文： | 罗小蓉,周春华,陈壮梁,詹瞻,张波,李肇基,雷磊.宽带隙半导体器件仿真中收敛性问题的分析[J].实验科学与技术,2007,5(2):14-16. |
| |
| 作者姓名： | 罗小蓉 周春华 陈壮梁 詹瞻 张波 李肇基 雷磊 |
| |
| 作者单位： | 电子科技大学微电子与固体电子学院,成都,610054 |
| |
| 摘 要： | 针对宽带隙半导体器件仿真中常见的不收敛性问题,通过分析数值求解算法与宽带隙半导体材料的固有特性知道,其原因是少子浓度过低,从而提出3种引入平衡或非平衡少子的解决方案。ISE仿真结果表明,采用文中提出的方案在解决收敛性同时能保证求解结果正确性,并且对刚开始进行宽带隙半导体器件仿真设计的本科生有很大帮助。
|
| 关 键 词： | 宽带隙半导体 收敛 少数载流子 ISE仿真 |
| 文章编号： | 1672-4550（2007）02-0014-03 |
| 收稿时间： | 2006-10-30 |
| 修稿时间： | 2006-12-11 |
Solutions to the Convergence Problems in Simulating Wide-bandgap Semiconductor Devices |
| |
| LUO Xiao-rong,ZHOU Chun-hua,CHEN Zhuang-liang,ZAN Zhan,ZHANG Bo,LI Zhao-ji,LEI Lei.Solutions to the Convergence Problems in Simulating Wide-bandgap Semiconductor Devices[J].Experiment Science & Technology,2007,5(2):14-16. |
| |
| Authors: | LUO Xiao-rong ZHOU Chun-hua CHEN Zhuang-liang ZAN Zhan ZHANG Bo LI Zhao-ji LEI Lei |
| |
| Abstract: | The convergence problems in simulating wide-bandgap semiconductor devices are analyzed, and three solutions are proposed to address this issue in this paper. Based on the analysis of the numerical algorithm and the properties of the wide-bandgap materials, these problems are attributed to the lowness of the minority carrier concentration, and three solutions to increase the equilibrium or non-equilibrium minority carrier concentration are presented. Two dimensional numerical simulation shows that these methods can solve the problems and get the correct results. |
| |
| Keywords: | wide-bandgap semiconductor convergence minority carrier ISE simulation |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
