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X射线双晶衍射研究LP-MOVPE生长的InGaAs/GaAs应变超晶格
引用本文:崔敬忠,陈光华,甘润今,张仿清,杨树人,刘宝林,陈佰军,刘式墉.X射线双晶衍射研究LP-MOVPE生长的InGaAs/GaAs应变超晶格[J].兰州大学学报(自然科学版),1996(3).
作者姓名:崔敬忠  陈光华  甘润今  张仿清  杨树人  刘宝林  陈佰军  刘式墉
作者单位:兰州大学物理系,吉林大学电子工程系
基金项目:集成光电子国家重点实验室资助
摘    要:用金属有机气相外延(LP-MOVPE)生长了一系列具有不同应变、不同周期以及不同缓冲层的InGaAs/GaAs应变超晶格.用X射线双晶衍射方法得到了样品的摇摆曲线.结合计算机模拟得到了样品的应变、组分等结构参数.对不同缓冲层的超晶格结构也进行了分析

关 键 词:气相外延生长  超晶格半导体  X射线衍射

X ray Double Crystal Diffraction Study of InGaAs/GaAs Strained Layer Superlattices with Different Buffer Layers Grown by LP MOVPE
Cui Jingzhong,Chen Guanghua,Gan Runjing,Zhang Fangqing.X ray Double Crystal Diffraction Study of InGaAs/GaAs Strained Layer Superlattices with Different Buffer Layers Grown by LP MOVPE[J].Journal of Lanzhou University(Natural Science),1996(3).
Authors:Cui Jingzhong  Chen Guanghua  Gan Runjing  Zhang Fangqing
Abstract:A series of InGaAs/GaAs superlattices with different buffer layers, strains and periods has been grown by LP MOVPE. X ray double crystal diffraction and dynamical simulation have been used to study the structural properties of the samples. The effects of different buffer layers have been discussed briefly.
Keywords:LP  MOVPE strained  layer  superlattices  X  ray double crystal diffraction
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