衬底偏压对ZnO：Zr薄膜结构及光电性能的影响

以Zn：Zr（Zr片贴在金属Zn靶上面）为溅射靶材，利用直流反应磁控溅射法在Ar／O_2混合气氛中制备Zr掺杂ZnO（ZnO：Zr）薄膜．在制备ZnO：Zr薄膜时，衬底偏压在0～60V之间变化．研究结果表明，衬底偏压对薄膜的结构、光学及电学性能有很大影响．当衬底偏压从0增大到60V时，薄膜的平均光学透过率和平均折射率都单调增大，而薄膜的晶粒尺寸先增大后减小．ZnO：Zr薄膜电阻率的变化规律与晶粒尺寸相反．

Effect of bias voltage on the structural,optical and electrical properties of ZnO:Zr thin films

Zr-doped ZnO thin films were fabricated in Ar/O2 mixture gas by DC reactive magne- tron sputtering from a Zn：Zr target where Zr chips were attached on the surface of the metallic Zn target. During the process of deposition, the substrate bias voltage ranges from 0 to 60 V. Re- sults indicate that the bias voltage plays an important role in the structure, optical and electrical properties of the deposited films. When the bias voltage increases from 0 to 60V, the average op- tical transmittance and refractive index of ZnO： Zr films monotoneously increase. However, the crystallite size increases initially and then decreases with increasing bias voltage. For the resistivi- ty of ZnO：Zr films, the variation is on the contrary.