| 6H-SiC埋沟MOSFET的C-V特性研究 |
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| 引用本文： | 王玉青,王巍,申君君. 6H-SiC埋沟MOSFET的C-V特性研究[J]. 重庆邮电学院学报(自然科学版), 2009, 0(1) |
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| 作者姓名： | 王玉青 王巍 申君君 |
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| 作者单位： | 重庆邮电大学光电工程学院; |
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| 基金项目： | 重庆市科委自然科学基金项目(CSTC,2006BB2364) |
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| 摘 要： | 研究了6H-SiC埋沟MOSFET器件的电容-电压解析模型,分析了埋沟MOSFET各种工作模式下的电容与电压之间的关系。在建模过程中考虑了SiO2/SiC界面态及PN结的影响,并仿真分析了耗尽模式、夹断模式下器件总的C-V特性的模型。由于在假设界面态密度分布均匀条件下,对界面态做了简化处理,因而计算结果与实验结果有所差异。
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| 关 键 词： | SiC 埋沟MOSFET C-V特性 界面态 |
C-V characteristics of 6H-SiC buried-channel MOSFET |
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| WANG Yu-qing,WANG Wei,SHEN Jun-jun. C-V characteristics of 6H-SiC buried-channel MOSFET[J]. Journal of Chongqing University of Posts and Telecommunications(Natural Sciences Edition), 2009, 0(1) |
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| Authors: | WANG Yu-qing WANG Wei SHEN Jun-jun |
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| Affiliation: | College of Electronic Engineering;Chongqing University of Posts and Telecommunications;Chongqing 400065;P.R.China |
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| Abstract: | The C-V characteristics of the 6H-SiC buried-channel MOSFET analytical model was investigated,and the C-V relationships in each model,such as accumulation,inversion,depletion and pinch off,were simulated.The C-V characteristics in depletion model and pinch off model were analyzed,and the effect of the interface states on SiO2/SiC interface and pn junction was considered in the analytical model.The assumption of uniform distribution for interface state was used in order to simplify the theoretical model.Fina... |
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