Co和Nb掺杂PZT铁电薄膜的制备及性能研究

采用溶胶-凝胶法在LaNiO3／Si衬底上制备了PbCoy（Zrx，Ti1-x）O3（PCZT）与PbCoyNbx（ZrxTi1-x）O3PCNZT）铁电薄膜，实验发现钴掺杂PZT比例为12mol％时，PCZT薄膜具有优良的铁电性和介电性，但是漏电流较大．为了能够很好地弥补PCZT薄膜漏电流太大的缺点，在12mol％Co掺杂的PCZT薄膜中掺入不同比例的Nb（在1mol%～10mol％掺杂范围内），实验结果表明，Nb掺杂比例越大，PCNZT薄膜的漏电流越小，但同时Nb掺杂减小了PCZT薄膜的剩余极化强度和介电常数．

The preparation and properties of PZT ferroelectric thin films with cobalt and Nb-doping

By Sol-Gel method, such ferroelectric thin films as PZT and PCZT and PCNZT were made on LaNiO3 substrates. The experimental results show that cobalt-doping can check the formation of-pyrochlore phase in the crystallization of PZT thin films. The results also show that the PZT ferroelectric thin films with cobalt-doping are found to possess greater remnant polarization, larger coercive field, more dielectric properties and increased leakage current. A proper cobalt-doping percentage is also found to be 10 mol%. The doping of different percentage of Nb in PCZT thin films with 10 mol% shows that Nb-doping is in a good position to overcome the over-leakage of PCZT thin films. Within a doping range of 1 mol% and 10 mol%, the larger Nb-doping percentage results in the less leakage of PCNZT and the simultaneous result is shown that Nb-doping leads to the reduction of PCZT remnant polarization power and dielectric constant.