| 电力电子器件表面溅射膜的保护机理研究 |
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| 引用本文： | 刘迪,崔秀芳.电力电子器件表面溅射膜的保护机理研究[J].西安交通大学学报,1990,24(3):63-70. |
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| 作者姓名： | 刘迪 崔秀芳 |
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| 作者单位： | 西安交通大学电气工程系，西安交通大学电气工程系，西安交通大学电气工程系 大连3280晶体管厂 |
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| 摘 要： | 本文研究了用直流硅靶溅射反应法制备的溅射膜的导电特性和表面屏蔽作用,得出低含氧气氛下(O_2/Ar<30%)生成的溅射膜是一种半绝缘性的含氧非晶硅.它用于电力电子器件表面作内层保护能屏蔽外界电荷,因而可以大幅度提高器件的耐压稳定性.
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| 关 键 词： | 电子器件 溅射膜 表面保护 |
STUDY OF PROTECTION MECHANISM OF SURFACE SPUTTERING FILMS ON POWER ELECTRONIC DEVICES |
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| Liu Di Cui Xiufang Xu Chuanxiang.STUDY OF PROTECTION MECHANISM OF SURFACE SPUTTERING FILMS ON POWER ELECTRONIC DEVICES[J].Journal of Xi'an Jiaotong University,1990,24(3):63-70. |
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| Authors: | Liu Di Cui Xiufang Xu Chuanxiang |
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| Institution: | Department of Electrical Engineering |
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| Abstract: | The paper investigates the conduction characteristic and the shield effect of sputtering films formed by D.C.sputtering reaction technology.It has been found that the sputtering film at low Oxygen flux(O_2/Ar<30%)is semi-insulating O_2-doped amorphous silicon.The film applied to the surface of power electronic devices as interior protection can shield outside charge,so that the stability of sustained voltage of power electronic devices can be
improved greatly. |
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| Keywords: | electronic device surfaces protection sputtering |
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