摘 要: | 1 Results If one-dimensional heterostructures with a well-defined compositional profile along the wire radial or axial direction can be realized within semiconductor nanowires, new nano-electronic devices,such as nano-waveguide and nano-capcipator, might be obtained. Here,we report the novel semiconducting nanowire heterostructures:(1) Si/ZnS side-to-side biaxial nanowires and ZnS/Si/ZnS sandwich-like triaxial nanowires1],(2) Ga-Mg3N2 and Ga-ZnS metal-semiconductor nanowire heterojunctions2-3]and (3) hierarchical heterostructures composed of Si core microwires and SiO2 nanowires4].The 1D semiconducting nanowire heterostructures are interesting objects with respect to physical properties and applications in the blocks of advanced semiconducting nanodevices.
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