| 用XPS对激活过程中的GaAs光电阴极的表面分析 |
| |
| 引用本文： | 黄振武,冯敦平.用XPS对激活过程中的GaAs光电阴极的表面分析[J].福州大学学报(自然科学版),1990(2):18-23. |
| |
| 作者姓名： | 黄振武 冯敦平 |
| |
| 作者单位： | 福州大学物理系
(黄振武)，福州大学物理系(冯敦平) |
| |
| 基金项目： | 国家自然科学基金的资助 |
| |
| 摘 要： | 对ＧａＡｓ光电阴极激活过程中各阶段做了Ｘ射线光电子谱（ＸＰＳ）表面分析，根据ＸＰＳ分析所得数据，改进了激活工艺，提出了获得更好发射性能的光电阴极的最佳Ｃｓ和Ｏ２量，并提出了Ｃｓ和Ｏ２在ＧａＡｓ表面排列的模型．
|
| 关 键 词： | XPS GaAS 光电阴极 |
Surface Analysis of the GaAs Photocathode by XPS During Activation |
| |
| Huang Zhenwu,Feng Dunping.Surface Analysis of the GaAs Photocathode by XPS During Activation[J].Journal of Fuzhou University(Natural Science Edition),1990(2):18-23. |
| |
| Authors: | Huang Zhenwu Feng Dunping |
| |
| Institution: | Department or Physics |
| |
| Abstract: | The GaAs photocathode surface has been studied by XPS in every stage of activation. Basing on the XPS data, we have improved the activation technology, suggested the optimum amount of Cs and O2 for photocathodes of better emmission properties, and proposed a model of Cs and O2 arrangement on the GaAs surface. |
| |
| Keywords: | XPS GaAs photocathode |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《福州大学学报(自然科学版)》浏览原始摘要信息 |
| 点击此处可从《福州大学学报(自然科学版)》下载免费的PDF全文 |
