| M／a—Si：H肖特基势垒参数的测量 |
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| 引用本文： | 张治国,宿昌厚.M／a—Si：H肖特基势垒参数的测量[J].应用科学学报,1997,15(2):187-192. |
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| 作者姓名： | 张治国 宿昌厚 |
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| 作者单位： | [1]内蒙古工业大学 [2]北京工业大学 |
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| 摘 要： | 介绍在中性区光电导调制下实现用高频Ｃ－Ｖ仪测量Ｍ／ａ－Ｓｉ：Ｈ肖特基势垒参数的方法，把所测结果与其他方法测量值作了比较，对Ａｌ／ａ－Ｓｉ：Ｈ势垒异常现象也进行了描述。
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| 关 键 词： | 硅 带隙结构 肖特基势垒参数 测量 |
THE EXPERIMENTAL STUDY OF M/A-SI:H SCHOTTKEY BARRIER PARAMETERS |
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| ZHANG ZHIGUO, SU CHANGHOU.THE EXPERIMENTAL STUDY OF M/A-SI:H SCHOTTKEY BARRIER PARAMETERS[J].Journal of Applied Sciences,1997,15(2):187-192. |
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| Authors: | ZHANG ZHIGUO SU CHANGHOU |
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| Abstract: | An experiment technique is introduced to modulate the neutral bulk region of M/a-Si:H system with light, and to measure the barrier characteristics of M/a-Si:H junction with high frequency O-V meter. The results obtained and available data from literatures arc compared. With much emphasis, the unusual phenomenon in Al/a-Si: H structure is described. |
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| Keywords: | M/a-Si:H barrier O-V characteristics photoconductive modulation |
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