氧化工艺中影响SiO2薄膜驻极体性能的因素

该文通过控制氧化工艺条件，利用相应条件下样品的等温表面电位衰减测量，热刺激放电电流谱及电容－电压分析技术等，研究了ＳｉＯ２驻极体薄膜的内部结构作能阱分布，以及在其体内沉积的空间电荷的储存稳定性，分析了驻极电荷稳定性同氧化工艺条件之间的内在联系。

THE ELEMENTS OF OXIDE CONDITION WHICH INFLUENCE THE ELECTRET PROPERTIES OF THE THERMALLY WET-GROWN SiO_2 FILMS

The structures of the SiO2 films and the distribution of the energy levels in the SiO2 films, which influences the stability of the space charges stored in the samples, are directly determined by the oxide condition. In this paper, the samples are produced by several oxide conditions. The stability of the space charges stored In the SiO2 films are investigated by using surface potential decay measurement.The activation energies of detrapping charges in the samples are estimated by using Thermally Stimulated Discharge (TSD) method. And the density of the sodium ions in the samples are determined by Capacitance-Voltage (C-V)Analyses technique. Based on these results, the inherent relationship between the stability of the space charges and the oxide condition is analyzed.