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一种高残碳率树脂为碳质前驱体制备致密SiC陶瓷
引用本文:刘波,徐顺建.一种高残碳率树脂为碳质前驱体制备致密SiC陶瓷[J].江西科学,2009,27(6):837-840.
作者姓名:刘波  徐顺建
作者单位:1. 新余高等专科学校太阳能科学与工程系,江西,新余,338000
2. 新余高等专科学校太阳能科学与工程系,江西,新余,338000;西安交通大学金属材料强度国家重点实验室,陕西,西安,710049
摘    要:以一种残碳率达到67%的树脂取代反应形成技术常用的糠醇树脂为碳质前驱体制备了致密SiC陶瓷。结果表明,制得的SiC陶瓷具有典型的形貌特征,由SiC、Si以及极少量的未反应的C组成。SiC陶瓷的密度及弯曲强度分别为3.04g·cm^-3和360.7MPa。碳质前驱体的取代依然保持了反应形成技术的主要特点,所以同样具有复杂形状、净成型能力。

关 键 词:聚合物  前驱体  渗入  碳化硅  形成

Preparation of Silicon Carbide Using High Char-yield Resin as Carbonaceous Precursor
LIU Bo,XU Shun-jian.Preparation of Silicon Carbide Using High Char-yield Resin as Carbonaceous Precursor[J].Jiangxi Science,2009,27(6):837-840.
Authors:LIU Bo  XU Shun-jian
Institution:LIU Bo ,XU Shun-jian ( 1. Department of Solar Energy Science and Engineering, Xinyu College ,Jiangxi Xinyu 338000 PRC; 2. Stale key Laboratory for Mechanical Behavior of Materials,Xi'an Jiaotong University,Shanxi Xi'an 710049 PRC)
Abstract:Dense SiC ceramic was prepared using high char-yield resin as carbonaceous precursor by reaction forming. At first the process for producing porous carbon perform was made sure by the investigation of resin curing and pyrolysis, then dense SiC was prepared using prepared carbon perform as template by in-situ reaction with liquid silicon. The results show that SiC ceramic with typical morphology and reasonable properties is obtained. The density and flexural strength of SiC ceramic is 3.04 g · cm^- 3 and 360.7 MPa,respectively. The ability to produce complex and near-net shapes is still kept.
Keywords:Polymers  Precursors  Infiltration  Silicon carbide  Formation
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