首页 | 本学科首页   官方微博 | 高级检索  
     检索      

聚四氟乙烯结构氟碳聚合物薄膜的研究进展
引用本文:谷建东,李东明,冯志庆,牛金海,刘东平.聚四氟乙烯结构氟碳聚合物薄膜的研究进展[J].大连民族学院学报,2007,9(5):130-133,141.
作者姓名:谷建东  李东明  冯志庆  牛金海  刘东平
作者单位:1. 大连交通大学,机械工程学院,辽宁,大连,116028
2. 大连民族学院,光电子技术研究所,辽宁,大连,116605
摘    要:聚四氟乙烯结构氟碳聚合物(Polytetrafluoroethylene-like fluorocarbon,PTFE-like FC)薄膜具有超低介电常数、高疏水性和生物相容性等优点.综述了国外制备PTFE-like FC薄膜的实验进展,分析了PTFE-like FC薄膜可能的沉积机理,指出热丝化学气相沉积(HFCVD)和射频等离子体辅助的化学气相沉积(rf-PECVD)这2种方法更有利于减少离子对薄膜表面的轰击作用,被认为是目前沉积PTFE-like FC薄膜最好的2种方法.介绍了利用介质阻挡放电(DBD)方法在低气压下制备PTFE-like FC薄膜的最新进展.

关 键 词:介电常数  氟碳聚合物薄膜  等离子体辅助化学气相沉积  热丝化学气相沉积
文章编号:1009-315X(2007)05-0130-04
修稿时间:2007-06-26

Advances in the Study of Polytetrafluoroethylene-like Fluorocarbon Film Deposition
GU Jian-dong,LI Dong-ming,Feng Zhi-qing,NIU Jin-hai,LIU Dong-ping.Advances in the Study of Polytetrafluoroethylene-like Fluorocarbon Film Deposition[J].Journal of Dalian Nationalities University,2007,9(5):130-133,141.
Authors:GU Jian-dong  LI Dong-ming  Feng Zhi-qing  NIU Jin-hai  LIU Dong-ping
Institution:1. School of Mechanical Engineering, Dalian Jiaotong University, Dalian Liaoning, 116028, China; 2. Institute of Optoelectronic Technology, Dalian Nationalities University, Dalian Liaoning, 116605, China
Abstract:Bulk polytetrafluoroethylene PTFE,(CF2)n] has many remarkable properties,including a low dielectric constant,hydrophobility and biocompatibility.In this paper,the theory and the process of the experiment and the majority of proposed mechanisms are introduced.Plasma enhanced chemical vapor deposition and hot wire chemical vapor deposition are considered to be the two best methods for PTFE-like FC thin film deposition,because they are more beneficial to reduce ion bombardment.Also we introduce our recent research process of depositing PTFE-like FC thin films using dielectric barrier discharge(DBD) method under low pressure.
Keywords:dielectric constant  fluorocarbon film  plasma enhanced chemical vapor deposition  hot wire chemical vapor deposition
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号