PI-TSV等效热导率提取与验证

与传统的T/R组件相比，采用转接板技术实现的2.5D集成硅基T/R组件体积更小，集成度更高，散热性能更好.硅通孔（through-silicon-via，TSV）是其中的关键结构.本文针对2.5D集成的复杂T/R组件难以直接建模进行有限元热学仿真的问题，通过提取TSV等效热导率的方法简化仿真.对聚酰亚胺（Polyimide，PI）作为绝缘介质层的硅通孔（PI-TSV）进行了相应的有限元数值模拟，并改变结构参数，研究了不同结构因素对PI-TSV等效热导率的影响.给出了PI-TSV等效热导率关于中心导电铜柱直径、绝缘介质层厚度及TSV间距的经验公式. 

Extraction and Verification on Equivalent Thermal Conductivity of PI-TSV

Compared with the traditional T/R modules, the 2.5D integrated silicon-based T/R modules implemented with TSV interposer are smaller, more integrated and possess better heat dissipation. Through-silicon-via (TSV) is one of the key structures. It is difficult to realize the finite element thermal simulation of complicated 2.5D integrated T/R modules, thus a solution which utilizes the equivalent thermal conductivity of TSV was employed to simplify the finite element analysis (finite element analysis, FEA) in this paper. The FEA of TSV with polymide liner (PI-TSV) was carried out and the structural parameters were changed to detect their effects on PI-TSV equivalent thermal conductivity. Finally, the empirical equation of PI-TSV equivalent thermal conductivity with respect to copper pillar diameter, insulation thickness and TSV pitch was presented.