| 中小功率二极管的正六方形周边设计 |
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| 引用本文： | 余岳辉,徐静平,綦舜尧.中小功率二极管的正六方形周边设计[J].华中科技大学学报(自然科学版),1992(1). |
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| 作者姓名： | 余岳辉 徐静平 綦舜尧 |
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| 作者单位： | 华中理工大学固体电子学系
(余岳辉，徐静平)，华中理工大学固体电子学系(綦舜尧) |
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| 摘 要： | 传统的中小功率器件周边大都为方形或圆形造型.制作pn结方片具有工艺简单、材料利用率较高的特点,但由于四个棱角处电场集中(称此电场为棱角电场),故阻断特性受到限制.圆片的表面电场相对低些,但材料损耗大,设法降低数量上占市场主导的中小功率器件的材料消耗将产生相当可观的经济效益.本文提出了正六方形周边设计方法,该设计相对方片可以降低表面电场强度,相对圆片可以大大提高硅材料利用率.
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A Regular Hexagon-Periphery Design for Medium and Small Power Diodes |
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| Yu Yuehui Xu Jingping Qi Shunyao.A Regular Hexagon-Periphery Design for Medium and Small Power Diodes[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1992(1). |
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| Authors: | Yu Yuehui Xu Jingping Qi Shunyao |
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| Institution: | Yu Yuehui Xu Jingping Qi Shunyao |
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| Abstract: | This paper is concerned about the regular hexagon-periphery modelling for the junction terminal of medium and small power diodes. The electric field at the edges and corners of the pn junction of the square and the regular hexagon wafers are analyzed respectively by the point electrode model. Calculated results show that the electric field intensity of the hexagon wafer is obviously lower than that of the former, but the utilization ratio of silicon materials is much higher. The selection of the optimum diameter for silicon materials is also suggested. |
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| Keywords: | periphery edges and corners surface electric field distribution |
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