| GaN基LED中Ag/ITO复合膜的光电性能研究 |
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| 引用本文： | 喻斌,王玉霞. GaN基LED中Ag/ITO复合膜的光电性能研究[J]. 长春大学学报, 2013, 0(2): 180-184 |
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| 作者姓名： | 喻斌 王玉霞 |
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| 作者单位： | 长春理工大学高功率半导体激光国家重点实验室 |
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| 摘 要： | 制备含有不同厚度Ag(0.5、2、4nm)的Ag/ITO多层膜沉积在以蓝宝石为衬底的外延片上并与P-GaN相接触,经过一定的退火处理。研究了Ag厚度、退火温度、退火时间对Ag/ITO多层膜的透过率、方块电阻和接触电阻率的影响。得出这种光电性能优良的Ag/ITO膜作为P型透明电极应用于大功率LED有广阔的前景。
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| 关 键 词： | Ag/ITO P-GaN 透过率 方块电阻 接触电阻 |
Analysis of Optical and Electrical Properties of Ag/ITO Composite Membrane for GaN-based LED |
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| YU Bin,WANG Yu-xia. Analysis of Optical and Electrical Properties of Ag/ITO Composite Membrane for GaN-based LED[J]. Journal of Changchun University, 2013, 0(2): 180-184 |
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| Authors: | YU Bin WANG Yu-xia |
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| Affiliation: | (National Key Lab on High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China) |
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| Abstract: | The samples of Ag/ITO multilayer films sedimentary with different Ag layer thickness of 0.5nm,2nm and 4nm are prepared,which is on the epitaxial wafer of sapphire substrate and contacts with p-GaN,and an annealing treatment on the samples is made.The effects of Ag thickness,annealing temperature and annealing time on the transmittance of Ag/ITO multilayer films,sheet resistance and specific contact resistance are investigated.The results show that,as a P-type transparent electrode,Ag/ITO multilayer films with good photoelectric properties applied in high power LED will have broad prospects. |
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| Keywords: | Ag/ITO P-GaN transmittance sheet resistance contact resistance |
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