ZnO纳米管阵列/p-Si异质结构的低温控制合成及其光电性能

通过选择性腐蚀ZnO纳米棒,在p型Si衬底上低温合成了ZnO纳米管阵列,构成ZnO纳米管阵列/p-Si异质结构(n-ZnONT/p-Si).ZnO纳米管阵列光致发光谱显示,在378 nm处出现了很强的紫外发射峰,而在500 nm左右有一个较宽的绿色发光峰,表明ZnO纳米管具有较好的结晶性.电流-电压曲线显示,n-ZnONT/p-Si异质结构在光暗两种条件下都表现出了较好的整流特性.在紫外光照射下,反向偏压区电流出现了较大的变化,反映出n-ZnONT/p-Si异质结构有较强的紫外光响应,有望成为潜在的紫外光探测器件.

Controllable Synthesis and Optical,Electrical Properties of ZnO Nanotube Arrays/p-Si Hetero-structures

High-density vertically aligned ZnO nanotube arrays were prepared on p-Si substrates by a facile and simple chemical etching process from electrodeposited ZnO nanorods at a low temperature.The ZnO nanotube arrays/p-Si hetero-structures were obtained.The ZnO nanotube arrays exhibited strong ultraviolet emissions at 378 nm and a broad green defect-related visible emission at 500 nm,indicating their high crystalline quality.Current-voltage measurements of the ZnO nanotube arrays/p-Si hetero-sturctures showed good rectifying behavior with or without ultraviolet light illumination.A good response to ultraviolet light illumination was observed from photocurrent measurements in the reverse biased condition.The results showed that the device was a promising candidate for UV detection.