| 短沟道MOS器件阈电压和跨导的温度关系 |
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| 引用本文： | 孙彦卿,孙立红.短沟道MOS器件阈电压和跨导的温度关系[J].辽宁大学学报(自然科学版),1992,19(4):34-44. |
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| 作者姓名： | 孙彦卿 孙立红 |
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| 作者单位： | 辽宁大学，辽宁大学，半导体厂 |
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| 摘 要： | 本文从yau的模型出发,推导出了短沟道硅栅MOSFET的阈电压表达式及阈电压与温度的关系:并考虑短沟道MOSFET的扩散电流。推导出简单的电流—电压关系表达式,求出了跨导;得到了与试验一致的结果。发现,随温度的降低,MOSFET的阈电压的大小上升,阈电压的温度梯度的大小减小,跨导的大小急剧上升。结果表明,MOSFET更适合低温下工作。
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| 关 键 词： | MOS器件 阈电压 跨导 |
The Temperature Dependence of Threshold Voltage and Transconductance in Short Channel MOS Devices |
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| Sun Yanqing Shi Guangyuan Sun Lihong Liaoning University Semiconductor Factory.The Temperature Dependence of Threshold Voltage and Transconductance in Short Channel MOS Devices[J].Journal of Liaoning University(Natural Sciences Edition),1992,19(4):34-44. |
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| Authors: | Sun Yanqing Shi Guangyuan Sun Lihong Liaoning University Semiconductor Factory |
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| Institution: | Sun Yanqing Shi Guangyuan Sun Lihong Liaoning University Semiconductor Factory |
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| Abstract: | Expressions of threshold voltage of short channel silicon gate MOS-FET and the temperature dependence of threshold voltage were derived from Yaus model. By consideration of diffusion current of short channel MOSFET, a brief expression of current voltage dependence was derived and transeonductance was obtained. The results are in good agreement with experiment. We found that as temperature drops, absolute value of MOSFET threshold valtage increases, absolute value of threshold voltage temperature gradient decreases and transconduetance increases steeply. Results show that MOSFET are much suitable for operations in cryogenic temperature. |
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