铁电场效应晶体管:原理、材料设计与研究进展

系统阐述了铁电场效应晶体管(FeFET)的工作原理，重点介绍了铁电层和缓冲层的材料设计的基本原理、目前所研究的主要的铁电层材料和缓冲层材料及其所对应的FeFET的器件性能．并介绍了关于FeFET研究的一些最新的进展如基于FeFET的FeCMOS逻辑电路、FeNAND闪存电路、基于氧化物半导体和有机半导体的FeFET的一些最新研究成果．最后对FeFET的未来研究发展趋势作出一些展望．

Ferroelectric -Gate Field Effect Transistors: Working Principle,Materials Design and Recent Research Progress

This paper will give a systematic introduction to the basic working principles of FeFET, especially we will focus on the material design rules in the FeFET, the main ferroelectric materials and high-K buffer layer materials investigated, and the electrical properties of their corresponding FeFET devices. Furthermore the latest research progress on FeFET such as FeCMOS logic circuits, FeNAND flash memory circuits, and novel FeFET device structures based on oxide semiconductor and organic semiconductor will also be introduced. Finally the possible future research prospect on this field will be suggested.