槽栅结构SiC材料IGBT的仿真及优化分析

运用半导体物理理论和功率器件模拟软件（SILVACO-TCAD），研究了新型宽禁带材料SiC槽栅结构IGBT功率半导体器件的电学特性，模拟了不同厚度和掺杂浓度漂移层和缓冲层的IGBT器件的阈值电压、开关特性和导通特性曲线，并分析了漂移层和缓冲层厚度及掺杂浓度对电学特性的影响。结果表明，当SiC-IGBT功率器件漂移层和缓冲层厚度分别为65 μm和2.5 μm，掺杂浓度分别为1×10¹⁵和5×10¹⁵cm^-3时，得到击穿电压为3400 V，阈值电压为8 V。

Simulation and analysis of a SiC trench insulated gate bipolar transistor(IGBT)

The Silvaco technology computer aided design(TCAD) component simulation software based on semiconductor theory has been used to simulate an insulated gate bipolar transistor(IGBT).In order to study the characteristics of the wide bandgap semiconductor material SiC,SiC-TIGBT devices with different thicknesses and dopant concentrations in the drift region and buffer region were compared.The effect of varying the parameters of the SiC-TIGBT on its electrical characteristics—such as threshold voltage,breakdown voltage and turn on/off characteristics—has been analyzed.The thickness of the optimized drift region and buffer region in SiC TIGBT were found to be 65 μm and 2.5 μm,respectively.The optimized dopant concentrations in the drift region and buffer region were 1×1015 cm-3 and 5×1015 cm-3,respectively.The optimized SiC TIGBT had a threshold voltage of 8V and a breakdown voltage of 3400V.