Sb-Se系和Ge-Sb-Te系相变光盘记录介质微观结构及光学性能研究

利用X射线衍射仪 ,分光光度计对Sb Se系和Ge Sb Te系相变光盘记录介质材料非晶态薄膜相变前后结构的变化 ,光学性能进行了系统的研究 ,X射线衍射分析表明 :SbSe非晶态薄膜退火后有Sb的析晶峰 ,SbSe2 有Se的析晶峰 ,符合化学计量比的Sb2 Se3 全部是Sb2 Se3 的共晶峰 .GeSb2 Te4 非晶态薄膜在热退火过仇逐首先形成fcc亚稳相 ,升高退火温度 ,Fcc相转变为稳定的hex相 ,GeSb4 Te4 非晶态薄膜退火后在发生上述变化的同时 ,还有Sb的析晶峰 .分光光度计测试表明 :Sb Se系非晶态的光稳定性很不理想 ,随着波长的改变 ,反射率变化太快 .对于Ge Sb Te系合金 ,在各种波段处 ,两种合金都有较大的反衬度 ,其非晶态的光稳定性也较理想 ,随着波长的改变 ,反射率变化不大

Studies on Microstructures and Optical Properties ofSb-Se-based and Ge-Sb-Te-based Phase Change Optical Disc Recording Media

This paper systematically studies the structural transformation and optical properties before and after the phase transforms of the Sb-Se-based and Ge-Sb-Te-based phase-change optical disk recording media amorphous films, by using X-ray diffractometer and spectrometer. The result of the X-ray diffractometer shows that crystalline peak of Sb appears after SbSe amorphous film is annealed, crystalline peak of Se appears after SbSe 2 amorphous film is annealed, and eutectic peak of Sb 2Se 3 appears after stoichiometric Sb 2Se 3 amorphous film is annealed. The fcc metastable phase is formed first during the process of the annealing of GeSb 2Te 4 amorphous film, it will be transformed into hex stable phase when the annealing temperature increased. Along with the aforementioned transformations happened after the annealing of the GeSb 4Te 4, the crystalline peak of Sb also appears. While the testing result of the spectrometer proves that Sb-Se-based alloys in amorphous state does not has a satisfactory light stability, as its reflectivity changes significantly fast with the changes of the wavelength. As to the Ge-Sb-Te-based alloys, both of them enjoy a relatively high reflectivity at anywavelength segment, and possess an ideal light stability inamorphous state, no major change occurs in their reflectivity with the changes of the wavelength.