| InAs/GaAs量子点生长条件的优化 |
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| 引用本文： | 程玉梅.InAs/GaAs量子点生长条件的优化[J].内蒙古民族大学学报(自然科学版),2014(5):497-500. |
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| 作者姓名： | 程玉梅 |
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| 作者单位： | 内蒙古民族大学 物理与电子信息学院,内蒙古通辽,028043 |
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| 摘 要： | 论文研究了InAs量子点的生长条件，通过实验得到了生长温度、沉积厚度不同下的量子点生长情况。引入Sb表面活化剂进行实验，优化了制备尺寸不同、密度相近的两种量子点的生长条件。
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| 关 键 词： | InAs/GaAs量子点 生长温度 沉积厚度 |
Optimization of Growth Conditions of InAs/GaAs Quantum Dots |
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| CHENG Yu-Mei.Optimization of Growth Conditions of InAs/GaAs Quantum Dots[J].Journal of Inner Mongolia University for the Nationalities(Natural Sciences),2014(5):497-500. |
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| Authors: | CHENG Yu-Mei |
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| Institution: | CHENG Yu-Mei ( College of Physics and Electronic Information, Inner Mongolia University for Nationalities, Tongliao 028043, China) |
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| Abstract: | The growth conditions of InAs quantum dots are discussed,and the growth of quantum dots with different growth temperature and deposition thickness are obtained experimentally.By using antimony surfactant-mediated,we find a suitable growth conditon needed in experiments.We optimize the growth conditon of InAs quantum dots to fabricate two kinds of quantum dots with similar density with different sizes. |
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| Keywords: | InAs/GaAs quantum dot Growth temperature Deposition thickness |
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