| 镓铝扩散产生表面层缺陷的机理及处理措施 |
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| 引用本文： | 刘秀喜.镓铝扩散产生表面层缺陷的机理及处理措施[J].山东师范大学学报(自然科学版),1997,12(2):149-152. |
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| 作者姓名： | 刘秀喜 |
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| 作者单位： | 山东师范大学半导体所 |
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| 摘 要： | 针对铝乳胶源涂布与气相Ｃａ杂质相结合的受主双质掺杂技术，分析了产生表面层缺陷的原因，并提出了减少缺陷的措施。
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| 关 键 词： | 受主双质掺杂 表面层缺陷 位错 晶闸管 镓铝扩散 |
MECHANISM AND REMEDY MEASURES OF SURFACE LAYER DEFECT PRODUCED BY GALLIUM_ALUMINIUM DIFFUSIO |
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| Liu Xiuxi.MECHANISM AND REMEDY MEASURES OF SURFACE LAYER DEFECT PRODUCED BY GALLIUM_ALUMINIUM DIFFUSIO[J].Journal of Shandong Normal University(Natural Science),1997,12(2):149-152. |
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| Authors: | Liu Xiuxi |
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| Abstract: | The acceptor double_impurity doping technique is introduced of combining the coating of aluminium emulsion with the gaseous phase Ga impurity to analyse the reasons for producing the surface layer defect,and the remedy measures for reducing the defect are given. |
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| Keywords: | acceptor double_impurity doping technique surface layer defect dislocation measure |
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