| Ar~+激光诱导淀积多晶硅精细线条 |
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| 引用本文： | 王英民,李星文,李保通,娄建中,彭英才.Ar~+激光诱导淀积多晶硅精细线条[J].河北大学学报(自然科学版),1992(1). |
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| 作者姓名： | 王英民 李星文 李保通 娄建中 彭英才 |
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| 作者单位： | 河北大学电子系
(王英民，李星文，李保通，娄建中)，河北大学电子系(彭英才) |
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| 摘 要： | 以聚焦的A_r~+激光束诱导多晶硅膜的淀积,在可移动的反应器上实现了宽度小于激光束径的多晶硅精细线条的直接书写。这可以视为VLSI的一种新的布线工艺的雏形。
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| 关 键 词： | A_r~+激光诱导淀积 多晶硅精细线条 |
Deposition of fine polysilicon line using Ar~+laser |
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| Wang Yingmin Li Xingwen Peng Yingcai,Li Baotong Lou Jianzhong.Deposition of fine polysilicon line using Ar~+laser[J].Journal of Hebei University (Natural Science Edition),1992(1). |
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| Authors: | Wang Yingmin Li Xingwen Peng Yingcai Li Baotong Lou Jianzhong |
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| Institution: | Department of Electronics |
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| Abstract: | The fine polysilicon lines with width less than the beam diameter of laser were deposited induced by focused Ar+laser in a movable reactor, The laser writting of polysilicon could be seen as a embryo of new VLSI wiring technology. |
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| Keywords: | Ar~+laser stimulated CVD Fine polysilicon line |
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